DocumentCode :
2010162
Title :
A study of TSV variation impact on power supply noise
Author :
Jung, Moongon ; Panth, Shreepad ; Lim, Sung Kyu
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2011
fDate :
8-12 May 2011
Firstpage :
1
Lastpage :
3
Abstract :
In this work, we study the through-silicon-via (TSV) RC variation impact on 3D power delivery network (PDN). First, we model TSV RC variation due to process variation. Then, we perform sign-off power supply noise analysis of 3D PDN in GDSII layouts which contain power/ground (P/G) TSV RC variation model. We explore the effect of TSV RC variation range, number of variation sources (P/G TSV count), number of C4 bumps and TSV size on the robustness of PDN under TSV RC variation. Our results show that TSV RC variations cause negligible influence on 3D PDN due to much smaller parasitic values of TSVs compared with that of entire PDN.
Keywords :
integrated circuit noise; three-dimensional integrated circuits; 3D PDN; 3D power delivery network; C4 bumps; GDSII layout; TSV RC variation impact; TSV size; parasitic value; power supply noise; power-ground TSV RC variation model; through-silicon-via; Capacitance; Layout; Noise; Power supplies; Resistance; Three dimensional displays; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
ISSN :
pending
Print_ISBN :
978-1-4577-0503-8
Type :
conf
DOI :
10.1109/IITC.2011.5940325
Filename :
5940325
Link To Document :
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