Dependence of trench charging on the velocity distribution of ions incident on a SiO/sub 2/ wafer

Author

Yagisawa, T. ; Makabe, T.

Author_Institution

Keio Univ., Yokohama, Japan

fYear

2003

fDate

5-5 June 2003

Firstpage

128

Abstract

Summary form only given, as follows. As ULSI device dimensions have been scaled down, a number of issues have been raised during plasma etching. Especially, a charging damage during plasma etching is important issue to be addressed. We focus on the charging caused by the difference of the velocity distribution between electrons and positive ions incident on a SiO/sub 2/ wafer.

Keywords

ULSI; integrated circuit modelling; silicon compounds; sputter etching; wafer-scale integration; Si; ULSI device dimensions; ion velocity distribution; plasma etching; trench charging; velocity distribution; wafer; Etching; Plasma accelerators; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma sheaths; Plasma sources; Plasma temperature; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on

Conference_Location

Jeju, South Korea

ISSN

0730-9244

Print_ISBN

0-7803-7911-X

Type

conf

DOI

10.1109/PLASMA.2003.1228545

Filename

1228545

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2010196