Reliability performance of advanced metallization options for 30nm ½ pitch in SiCOH low-k materials

Author

Croes, K. ; Demuynck, S. ; Siew, Y.K. ; Wilson, C.J. ; Heylen, N. ; Beyer, G.P. ; Tökei, Zs

Author_Institution

Imec, Leuven, Belgium

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

Metallization options to fill 30nm 1/2 pitch trenches have been explored and their Time-Dependent-Dielectric-Breakdown (TDDB) and electromigration (EM) performance have been benchmarked to the conventional PVD TaNTa/PVD Cu seed based metallization. CVD Co as seed enhancement layer shows no deterioration in TDDB performance and improved EM performance, but the activation energy for EM was 0.68±0.20eV, which is at the lower end of the expected value of 0.85-0.95eV for this parameter. PVD RuTa barriers with 90%Ru and 10%Ta show degraded barrier performance and significant lowering of activation energy for EM (0.59±0.05eV). Finally, it is shown that, using an optimized PVD Cu seed, standard PVD TaNTa-barriers give excellent TDDB performance and that typical EM lifetime specs can be met with this metallization scheme down to 30nm 1/2 pitch.

Keywords

chemical vapour deposition; electric breakdown; electromigration; integrated circuit metallisation; integrated circuit reliability; low-k dielectric thin films; silicon compounds; CVD; SiCOH; SiCOH low-k materials; activation energy; electromigration; metallization; reliability; time-dependent-dielectric-breakdown; Copper; Filling; Maintenance engineering; Materials; Metallization; Reliability; Split gate flash memory cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940330

Filename

5940330