DocumentCode
2010263
Title
Dry etching of GaAs-based semiconductors in high-density planar inductively coupled BCl/sub 3/ plasmas
Author
Lee, Jae W. ; Lim, W.T. ; Baek, I.G. ; Cho, G.S. ; Cho, K.S. ; Pearton, S.J.
Author_Institution
Sch. of Nano Eng., Inje Univ., Gimhae, South Korea
fYear
2003
fDate
5-5 June 2003
Firstpage
130
Abstract
Summary form only given, as follows. We investigated planar ICP etching of GaAs-based semiconductors including GaAs, AlGaAs and InGaP with BCl/sub 3/ gas chemistry.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; sputter etching; AlGaAs; BCl/sub 3/; GaAs; dry etching; gas chemistry; high-density planar inductively coupled plasmas; planar ICP etching; semiconductors; Dry etching; Fluid flow; Gallium arsenide; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma sources; Rough surfaces; Surface cleaning; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location
Jeju, South Korea
ISSN
0730-9244
Print_ISBN
0-7803-7911-X
Type
conf
DOI
10.1109/PLASMA.2003.1228549
Filename
1228549
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