Title :
Texture change of NiSi film with dopant implantation
Author :
Kimura, Hiromitsu ; Tomita, R.
Author_Institution :
Device & Anal. Technol. Div., Renesas Electron. Corp., Sagamihara, Japan
Abstract :
We investigated the texture of NiSi films on Si substrates with various implanted species. Detailed analysis using pole figure measurements shows that implantation of boron on substrate changes the texture of NiSi films drastically, from axiotaxy to transrotational structure, when the dose of boron is more than 5e15 atoms/cm2. We predict that this transition of crystallographic orientation is driven by the total energy minimization, which consists of interfacial energy of films and/or elastic energy of NiSi lattice.
Keywords :
boron; crystal orientation; ion implantation; nickel alloys; semiconductor doping; silicon alloys; surface energy; surface texture; thermal stability; NiSi; Si:B; crystallographic orientation; dopant implantation; interfacial energy; texture change; total energy minimization; transrotational structure; Atomic layer deposition; Boron; Films; Lattices; Silicon; Substrates; Thermal stability;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940331
