• DocumentCode
    2010287
  • Title

    Texture change of NiSi film with dopant implantation

  • Author

    Kimura, Hiromitsu ; Tomita, R.

  • Author_Institution
    Device & Anal. Technol. Div., Renesas Electron. Corp., Sagamihara, Japan
  • fYear
    2011
  • fDate
    8-12 May 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We investigated the texture of NiSi films on Si substrates with various implanted species. Detailed analysis using pole figure measurements shows that implantation of boron on substrate changes the texture of NiSi films drastically, from axiotaxy to transrotational structure, when the dose of boron is more than 5e15 atoms/cm2. We predict that this transition of crystallographic orientation is driven by the total energy minimization, which consists of interfacial energy of films and/or elastic energy of NiSi lattice.
  • Keywords
    boron; crystal orientation; ion implantation; nickel alloys; semiconductor doping; silicon alloys; surface energy; surface texture; thermal stability; NiSi; Si:B; crystallographic orientation; dopant implantation; interfacial energy; texture change; total energy minimization; transrotational structure; Atomic layer deposition; Boron; Films; Lattices; Silicon; Substrates; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
  • Conference_Location
    Dresden
  • ISSN
    pending
  • Print_ISBN
    978-1-4577-0503-8
  • Type

    conf

  • DOI
    10.1109/IITC.2011.5940331
  • Filename
    5940331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2010287