Surface contaminants cleaning characteristics of etched Si wafer in SF/sub 6/ ICP

Summary form only given, as follows. During semiconductor fabrication processes, various contaminants such as molecular, ionic, atomic and gaseous types are deposited on the surface of semiconductors by equipment, humans or materials The importance of control and minimization of semiconductor surface contaminants is obvious from the fact that over 50 % of the yield losses in integrated circuit fabrication are caused by microcontamination. Dry cleaning method by ozone and UV, therefore, is employed to clean the silicon wafer surface after etching process.