Title :
Effects of temperature on the etching properties of Bi/sub 4-x/La/sub x/Ti/sub 3/O/sub 12/ thin films
Author :
Kim DP ; Kim, Kyung Tae ; Kim, C.I.
Author_Institution :
Sch. of Electr. & Electron. Eng., Chungang Univ., Seoul, South Korea
Abstract :
Summary form only given, as follows. Non-volatile ferroelectric random access memories (FRAMs) have widely studied for communication products and smart cards due to low operating voltage, fast switching speed, and nonvolatility. In recent years, high permittivity dielectrics have been studied intensively for ferroelectric random access memories (FRAM) owing to low operating voltage and fast switching speed and nonvolatility Bi-layered Bi/sub 4-x/La/sub x/Ti/sub 3/O/sub 12/ have been intensively studied.
Keywords :
etching; ferroelectric storage; ferroelectric switching; ferroelectric thin films; random-access storage; Bi/sub 4-x/La/sub x/Ti/sub 3/O/sub 12/; FRAM; etching properties; fast switching speed; high permittivity dielectrics; nonvolatile ferroelectric random access memories; temperature effect; thin films; Bismuth; Communication switching; Etching; Ferroelectric films; Ferroelectric materials; Low voltage; Nonvolatile memory; Random access memory; Smart cards; Temperature;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1228551
