Effects of temperature on the etching properties of Bi/sub 4-x/La/sub x/Ti/sub 3/O/sub 12/ thin films

Author

Kim DP ; Kim, Kyung Tae ; Kim, C.I.

Author_Institution

Sch. of Electr. & Electron. Eng., Chungang Univ., Seoul, South Korea

fYear

2003

fDate

5-5 June 2003

Firstpage

131

Abstract

Summary form only given, as follows. Non-volatile ferroelectric random access memories (FRAMs) have widely studied for communication products and smart cards due to low operating voltage, fast switching speed, and nonvolatility. In recent years, high permittivity dielectrics have been studied intensively for ferroelectric random access memories (FRAM) owing to low operating voltage and fast switching speed and nonvolatility Bi-layered Bi/sub 4-x/La/sub x/Ti/sub 3/O/sub 12/ have been intensively studied.

Keywords

etching; ferroelectric storage; ferroelectric switching; ferroelectric thin films; random-access storage; Bi/sub 4-x/La/sub x/Ti/sub 3/O/sub 12/; FRAM; etching properties; fast switching speed; high permittivity dielectrics; nonvolatile ferroelectric random access memories; temperature effect; thin films; Bismuth; Communication switching; Etching; Ferroelectric films; Ferroelectric materials; Low voltage; Nonvolatile memory; Random access memory; Smart cards; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on

Conference_Location

Jeju, South Korea

ISSN

0730-9244

Print_ISBN

0-7803-7911-X

Type

conf

DOI

10.1109/PLASMA.2003.1228551

Filename

1228551