Crack propagation and delamination analysis within the die by camera-assisted double cantilever beam technique

Crack propagation in copper-dielectric structures is an important concern regarding die failure, requiring reliable and fast characterization of crack propagation and corresponding adhesion properties. In the present investigation, a modified double cantilever beam (DCB) technique based on optical crack determination by gap opening measurement is utilized for local G_c analysis on interconnect structures for 32 nm technology node and below. In comparison to conventional DCB test set-up, a significant increase in the number of measurement points and thus in the local resolution for G_c is obtained.