• DocumentCode
    2010389
  • Title

    Copper electrochemical deposition in macroporous silicon arrays for through silicon via applications

  • Author

    Defforge, T. ; Coudron, L. ; Gautier, G. ; Grimal, V. ; Ventura, L. ; Van, F. Tran

  • Author_Institution
    Lab. de Microelectron. de Puissance, Univ. Francois Rabelais de Tours, Tours, France
  • fYear
    2011
  • fDate
    8-12 May 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The present paper deals with the realization of high conductivity through silicon via from macroporous silicon arrays. The pores were first etched by anodization into a hydrofluoric acid mixture. The high aspect ratio via were then filled by an optimized potentiostatic way involving a specific electrolyte with additives. The copper micro-wires were observed by SEM whereas XRD analysis enabled the determination of copper average grain size.
  • Keywords
    integrated circuit interconnections; SEM; XRD analysis; copper electrochemical deposition; copper microwires; high aspect ratio via; high conductivity through silicon via; hydrofluoric acid mixture; macroporous silicon arrays; Copper; Electrodes; Etching; Hafnium; Silicon; Through-silicon vias; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
  • Conference_Location
    Dresden
  • ISSN
    pending
  • Print_ISBN
    978-1-4577-0503-8
  • Type

    conf

  • DOI
    10.1109/IITC.2011.5940336
  • Filename
    5940336