DocumentCode
2010409
Title
Temporary passivation of Cu for low temperature (< 300°C) 3D wafer stacking
Author
Lim, D.F. ; Wei, J. ; Leong, K.C. ; Tan, C.S.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2011
fDate
8-12 May 2011
Firstpage
1
Lastpage
3
Abstract
Self-assembled monolayer (SAM) of alkane-thiol is applied to provide temporary passivation on Cu surface for protection against oxidation. The thermal stability of SAM is improved by storage at low temperature and in inert ambient. Surface analysis shows that SAM is effective in retarding surface oxidation and the degree of protection is higher for SAM with longer chain length. Wafer-to-wafer bonding result shows shear strength enhancement in the Cu-Cu bond when the appropriate chain length is used. Longer chain is less susceptible to thermal desorption hence no improvement in the bond strength is obtained.
Keywords
copper; monolayers; oxidation; self-assembly; shear strength; thermal management (packaging); wafer bonding; Cu; Cu-Cu bond; SAM; alkane-thiol; bond strength; copper surface; low temperature 3D wafer stacking; self-assembled monolayer; shear strength; surface analysis; surface oxidation; temporary passivation; thermal desorption; thermal stability; wafer-to-wafer bonding; Annealing; Bonding; Copper; Passivation; Surface cleaning; Thermal stability; Three dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location
Dresden
ISSN
pending
Print_ISBN
978-1-4577-0503-8
Type
conf
DOI
10.1109/IITC.2011.5940337
Filename
5940337
Link To Document