Title :
CVD and ALD of Cobalt-tungsten alloy film as a novel Copper diffusion barrier
Author :
Shimizu, Hideharu ; Sakoda, Kaoru ; Shimogaki, Yukihiro
Abstract :
To reduce resistivity of interconnect, to enhance electromigration life time, and to improve a step coverage of barrier layer, cobalt and cobalt-tungsten alloy film was deposited by chemical vapor deposition (CVD) or atomic layer deposition (ALD) using octacarbonyl dicobalt (Co2(CO)8) and biscyclopentadienyl cobalt (Cp2Co) as precursors, respectively. We demonstrated to form conformal cobalt films on to trench pattern and we confirmed that CVD/ALD cobalt-tungsten films have good barrier properties against copper diffusion.
Keywords :
atomic layer deposition; chemical vapour deposition; cobalt alloys; diffusion barriers; electrical resistivity; electromigration; integrated circuit interconnections; tungsten alloys; ALD; CVD; CoW; atomic layer deposition; barrier layer; biscyclopentadienyl cobalt; chemical vapor deposition; cobalt-tungsten alloy film; copper diffusion barrier; electromigration life time; interconnect resistivity; octacarbonyl dicobalt; Cobalt; Conductivity; Copper; Films; Substrates; Tungsten;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940343
