Title :
Thermal stability and interface improvement of thin NiSiGe by C+ ion implantation
Author :
Zhang, B. ; Yu, W. ; Zhao, Q.T. ; Buca, D. ; Holländer, B. ; Hartmann, J. -M ; Zhang, M. ; Wang, X. ; Mantl, S.
Author_Institution :
Peter Grunberg Inst. 9 (PGI 9), Forschungszentrum Juelich, Julich, Germany
Abstract :
In this work, we address the effect of C+ ion implantation on the formation of nickel-germanosilicide NiSi0.8Ge0.2 on relaxed Si0.8Ge0.2 layers. The layer morphology and sheet resistance are investigated as a function of the C+ implantation dose and annealing temperature. The presence of C atoms increases the NiSiGe thermal stability by about 200°C. We demonstrate that the carbon atoms retard the growth of germanosilicide layers, stabilize the NiSiGe phase and, due to C segregation at grain boundaries and interface during annealing, smooth the Ni Si0.8Ge0.2/Si0.8Ge0.2 interface.
Keywords :
Ge-Si alloys; annealing; carbon; crystal morphology; grain boundaries; ion implantation; nickel alloys; thermal stability; NiSiGe:C; annealing temperature; carbon atoms; grain boundaries; interface improvement; ion implantation; layer morphology; nickel-germanosilicide; segregation; sheet resistance; thermal stability; Annealing; Ion implantation; Nickel; Silicidation; Silicon; Silicon germanium; Thermal stability;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940344
