Impact of ambient atmosphere on plasma-damaged porous low-k characterization

Author

Darnon, M. ; Chevolleau, T. ; David, T. ; Posseme, N. ; Bouyssou, R. ; Hurand, R. ; Joubert, O. ; Licitra, C. ; Rochat, N. ; Bailly, F. ; Verove, C.

Author_Institution

LTM, UJF-Grenoble 1, Grenoble, France

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

Improving Integrated Circuits performance requires the use of porous SiCOH in interconnects. However, porosity leads to plasma species diffusion into the material during the patterning steps, which damages the low-k properties. Characterizing plasma-damaged porous SiCOH is not straightforward, and requires a specific characterization setup and protocol. In this paper, we show the impact of the ambient atmosphere on the low-k properties, and how it should be taken into account during the characterization of plasma-damaged porous SiCOH.

Keywords

diffusion; integrated circuit interconnections; low-k dielectric thin films; porosity; porous materials; silicon compounds; SiCOH; ambient atmosphere; integrated circuits performance; low-k property; patterning steps; plasma species diffusion; plasma-damaged porous low-k characterization; porosity; Atmosphere; Atmospheric measurements; Humidity; Plasma measurements; Plasmas; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940348

Filename

5940348