DocumentCode :
2010804
Title :
Fully SiO/sub 2/ Isolated High Speed Self-Aligned Bipolar Transistor on Thin SOI
Author :
Nishizawa, H. ; Azuma, S. ; Yoshitake, T. ; Kawata, S. ; Ikeda, Takashi ; Kawaji, M. ; Anzai, A.
Author_Institution :
Hitachi VLSI Engineering Ltd., Japan
fYear :
1991
fDate :
28-30 May 1991
Firstpage :
51
Lastpage :
52
Keywords :
Bipolar integrated circuits; Bipolar transistor circuits; Bipolar transistors; Conductive films; Dielectric thin films; Fabrication; High speed integrated circuits; Semiconductor films; Silicon; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
DOI :
10.1109/VLSIT.1991.705985
Filename :
705985
Link To Document :
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