• DocumentCode
    2010817
  • Title

    Thermoelectric behavior of microchannel plates fabricated by photo-assisted electrochemical etching

  • Author

    Sun, Li ; Miao, Fengjuan ; Wang, Lianwei ; Chu, Paul K. ; Sarro, P.M.

  • Author_Institution
    Dept. of Electron. Eng., East China Normal Univ., Shanghai, China
  • fYear
    2010
  • fDate
    24-28 Jan. 2010
  • Firstpage
    576
  • Lastpage
    579
  • Abstract
    We demonstrate the favorable thermoelectric properties of silicon microchannel plates prepared by photo-assisted electrochemical etching (PAECE). The microchannels have a square lattice distribution. The lateral Seebeck coefficient is related to the orientation and is 186 ¿V/K along the edge of the square and 204 ¿V/K when the measurement is performed at 45° with respect to the edge. The Seebeck coefficient in the vertical direction is about one sixth of the lateral value. In order to investigate whether the photonic crystal properties of the silicon microchannels have any influence on the Seebeck coefficient, both microchannel plates with holes tilted 7° with respect to the vertical direction and ordinary silicon microchannel plates are tested. They exhibit a similar thermoelectric behavior. These values are comparable to the value of silicon nanowires at room temperature, making the use of microchannel plates a good alternative to nanowires for temperature sensors.
  • Keywords
    Seebeck effect; elemental semiconductors; etching; micromechanical devices; photonic crystals; silicon; Si; lateral Seebeck coefficient; photoassisted electrochemical etching; photonic crystal properties; silicon microchannel plates; square lattice distribution; temperature sensors; thermoelectric behavior; Etching; Lattices; Microchannel; Nanowires; Performance evaluation; Photonic crystals; Silicon; Temperature sensors; Testing; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
  • Conference_Location
    Wanchai, Hong Kong
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-5761-8
  • Electronic_ISBN
    1084-6999
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2010.5442436
  • Filename
    5442436