Title :
Robust low-voltage program-erasable capacitors of Pd-Al2O3-Si with high density Ru-based nanocrystals embedded
Author :
Gou, Hong-Yan ; Ding, Shi-Jin ; Sun, Qing-Qing ; Zhang, David Wei
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
Pd electrode-based metal-oxide-semiconductor (MOS) capacitors with high density Ru-based nanocrystals in atomic-layer-deposited Al2O3 dielectric have been fabricated and electrically characterized, exhibiting robust programming and erasing characteristics even under low voltages. Further, the tunable memory characteristics of the MOS capacitors are demonstrated by varying the tunneling-layer (T)/blocking-layer (B) thickness ratio, and the underlying mechanisms are addressed.
Keywords :
MOS capacitors; aluminium compounds; atomic layer deposition; dielectric materials; low-power electronics; nanostructured materials; palladium; ruthenium; silicon; MOS capacitors; Pd electrode; Pd-Al2O3-Si; Ru-based nanocrystals; atomic layer deposition; blocking-layer; dielectrics; low-voltage capacitors; metal-oxide-semiconductor capacitors; program-erasable capacitors; tunneling-layer; Aluminum oxide; Annealing; Capacitors; Films; Nanocrystals; Programming; Tunneling;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940355
