Title :
The simplest modification of Cu diffusion barrier dielectrics to improve Cu/Low-k interconnects reliability
Author :
Goto, Kinya ; Oka, Yoshihiro ; Suzumura, Naohito ; Shibata, Ryuji ; Furuhashi, Takahisa ; Matsumoto, Masahiro ; Kawamura, Takeshi ; Matsuura, Masazumi ; Fujisawa, Masahiko ; Asai, Koyu
Author_Institution :
Renesas Electron. Corp., Hitachinaka, Japan
Abstract :
In recent years, it has become more serious concern to achieve high reliability(EM, SM and TDDB) in Cu/Low-k interconnects. In this paper, we propose the simplest method to improve EM and SM reliability using the conventional SiCN deposition system without the complicated system and special source gases. And also, we propose a new hermeticity test procedure using TDS(Thermal Desorption Spectroscopy).
Keywords :
copper; dielectric materials; diffusion barriers; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; low-k dielectric thin films; silicon compounds; thermally stimulated desorption; Cu diffusion barrier dielectrics; Cu/low-k interconnects reliability; EM reliability; SM reliability; SiCN; deposition system; hermeticity test procedure; thermal desorption spectroscopy; Copper; Films; Leakage current; Reliability; Silicon carbide; Stress; Water;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940357
