The simplest modification of Cu diffusion barrier dielectrics to improve Cu/Low-k interconnects reliability

Author

Goto, Kinya ; Oka, Yoshihiro ; Suzumura, Naohito ; Shibata, Ryuji ; Furuhashi, Takahisa ; Matsumoto, Masahiro ; Kawamura, Takeshi ; Matsuura, Masazumi ; Fujisawa, Masahiko ; Asai, Koyu

Author_Institution

Renesas Electron. Corp., Hitachinaka, Japan

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

In recent years, it has become more serious concern to achieve high reliability(EM, SM and TDDB) in Cu/Low-k interconnects. In this paper, we propose the simplest method to improve EM and SM reliability using the conventional SiCN deposition system without the complicated system and special source gases. And also, we propose a new hermeticity test procedure using TDS(Thermal Desorption Spectroscopy).

Keywords

copper; dielectric materials; diffusion barriers; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; low-k dielectric thin films; silicon compounds; thermally stimulated desorption; Cu diffusion barrier dielectrics; Cu/low-k interconnects reliability; EM reliability; SM reliability; SiCN; deposition system; hermeticity test procedure; thermal desorption spectroscopy; Copper; Films; Leakage current; Reliability; Silicon carbide; Stress; Water;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940357

Filename

5940357