Title :
Modulation of Schottky barrier height for NiSi/Si(110) diodes using an antimony interlayer
Author :
Guo, Xiao ; Xu, Yao-Juan ; Jiang, Yu-Long ; Ru, Guo-Ping ; Li, Bing-Zong
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
The barrier height modulation of Ni-silicided Schottky contacts fabricated on n-Si(100), n-Si(110), p-Si(100) and p-Si(110) substrate using an antimony (Sb) interlayer was investigated. The Sb layer was directly sputter-deposited on Si substrate followed by the regular Ni deposition and rapid thermal annealing. It is revealed that NiSi can still form even with the Sb interlayer and the effective Schottky barrier height can be significantly modulated on all kinds of Si substrates.
Keywords :
Schottky barriers; antimony; nickel compounds; rapid thermal annealing; semiconductor diodes; silicon; sputter deposition; NiSi-Si-Sb; NiSi/Si(110) diodes; Schottky barrier height modulation; Si; antimony interlayer; n-Si(100) substrate; n-Si(110) substrate; p-Si(100) substrate; p-Si(110) substrate; rapid thermal annealing; sputter deposition; Annealing; Modulation; Nickel; Schottky barriers; Schottky diodes; Silicon; Substrates;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940360
