Title :
A Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI
Author :
Higaki, N. ; Fukano, T. ; Fukuroda, A. ; Sugii, T. ; Arimoto, Y. ; Ito, T.
Author_Institution :
Fujitsu Laboratories Ltd., Japan
Keywords :
Bipolar transistors; Bonding; Boron; Cutoff frequency; Fabrication; Indium tin oxide; Laboratories; MOS devices; Parasitic capacitance; Silicon compounds;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705986
