Title :
A novel test structure for measuring the threshold voltage variance in MOSFETs
Author :
Yamaguchi, Takahiro J. ; Tandon, James S. ; Komatsu, Satoshi ; Asada, Kunihiro
Author_Institution :
Advantest Labs. Ltd., Sendai, Japan
Abstract :
A new threshold voltage variation monitoring circuit is introduced which utilizes a stochastic comparator group. It occupies minimal area, only requires a DC input stimulus voltage, and performs digital DC measurement. Traditional methods have required the measurement of the variation in a ring oscillator frequency. Our method circumvents the need for AC measurements, and accelerates the accumulation of data by incorporating stochastic properties into the circuit.
Keywords :
MOSFET; oscillators; semiconductor device testing; stochastic processes; voltage measurement; AC measurements; DC input stimulus voltage; MOSFET; digital DC measurement; ring oscillator frequency; stochastic comparator group; stochastic properties; test structure; threshold voltage variance measurement; threshold voltage variation monitoring circuit; Frequency measurement; MOSFET; Noise; Stochastic processes; Threshold voltage; Voltage measurement;
Conference_Titel :
Test Conference (ITC), 2013 IEEE International
Conference_Location :
Anaheim, CA
DOI :
10.1109/TEST.2013.6651878
