DocumentCode
2011075
Title
A novel test structure for measuring the threshold voltage variance in MOSFETs
Author
Yamaguchi, Takahiro J. ; Tandon, James S. ; Komatsu, Satoshi ; Asada, Kunihiro
Author_Institution
Advantest Labs. Ltd., Sendai, Japan
fYear
2013
fDate
6-13 Sept. 2013
Firstpage
1
Lastpage
8
Abstract
A new threshold voltage variation monitoring circuit is introduced which utilizes a stochastic comparator group. It occupies minimal area, only requires a DC input stimulus voltage, and performs digital DC measurement. Traditional methods have required the measurement of the variation in a ring oscillator frequency. Our method circumvents the need for AC measurements, and accelerates the accumulation of data by incorporating stochastic properties into the circuit.
Keywords
MOSFET; oscillators; semiconductor device testing; stochastic processes; voltage measurement; AC measurements; DC input stimulus voltage; MOSFET; digital DC measurement; ring oscillator frequency; stochastic comparator group; stochastic properties; test structure; threshold voltage variance measurement; threshold voltage variation monitoring circuit; Frequency measurement; MOSFET; Noise; Stochastic processes; Threshold voltage; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference (ITC), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1089-3539
Type
conf
DOI
10.1109/TEST.2013.6651878
Filename
6651878
Link To Document