Title :
AUSN solder vacuum packaging using melted solder floodgates and laser-activated non-evaporable getters for SIC diaphragm anticorrosive vacuum sensors
Author :
Tanaka, Shuji ; Honjoya, Yutaka ; Esashi, Masayoshi
Author_Institution :
Dept. of Nanomech., Tohoku Univ., Sendai, Japan
Abstract :
Versatile wafer-level vacuum packaging technology using screen-printed AuSn eutectic solder was developed and applied to a SiC diaphragm anticorrosive vacuum sensor. Thin film Ti/SiO2 ¿floodgates¿ were used to prevent melted AuSn solder from flowing into microstructures, e.g. capacitive gaps. After vacuum packaging, a non-evaporable getter (NEG), which chemically absorbs residual gas, was activated by Nd:YAG laser. In comparison to other wafer-level vacuum packaging technologies, the developed one establishes electrical connections and feedthroughs simultaneously, and is tolerant to surface roughness, surface contamination and wafer waviness.
Keywords :
electronics packaging; getters; gold compounds; micromechanical devices; silicon compounds; solders; surface roughness; AUSN solder vacuum packaging; AuSn; SiC; SiC diaphragm anticorrosive vacuum sensor; Ti-SiO2; laser-activated nonevaporable getter; melted solder floodgate; screen-printed AuSn eutectic solder; surface contamination; surface roughness; thin film; wafer waviness; wafer-level vacuum packaging technology; Chemical lasers; Chemical technology; Gettering; Packaging; Rough surfaces; Silicon carbide; Surface contamination; Surface roughness; Vacuum technology; Wafer scale integration;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location :
Wanchai, Hong Kong
Print_ISBN :
978-1-4244-5761-8
Electronic_ISBN :
1084-6999
DOI :
10.1109/MEMSYS.2010.5442459