Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A W-band triple cascode down conversion mixer using a 0.15- μm pseudomorphic high-electron mobility transistor process is proposed in this paper. Due to the utilization of modified bias topology, resistive mixing core, and IF low-pass filter, this circuit has a very wide IF bandwidth. Moreover, the triple cascode structure is used in this mixer for high local oscillator (LO)-to-RF isolation and compact chip area. The measured results illustrate that the mixer achieves 9-13-dB upper sideband conversion loss with dc-to-26-GHz IF bandwidth, and the LO-to-IF, LO-to-RF, and RF-to-IF isolation are 38, 42, and 40 dB, respectively with 5-dBm LO power at 86 GHz. When the LO power is 7 dBm at 96 GHz, the upper sideband conversion loss is 10-14 dB with dc-to-24-GHz IF bandwidth, and LO-to-IF, LO-to-RF, and RF-to-IF isolation are 29, 41.5, and 45 dB, respectively. The power consumption is 24 mW and chip area is 1 mm2.
Keywords :
high electron mobility transistors; isolation technology; low-pass filters; microwave mixers; millimetre wave mixers; IF low-pass filter; W-band high LO-to-RF isolation; frequency 0 GHz to 96 GHz; modified bias topology; power 24 mW; pseudomorphic high-electron mobility transistor; resistive mixing core; size 0.15 mum; triple cascode down conversion mixer; wide IF bandwidth; Astronomy; Bandwidth; Logic gates; Mixers; Ports (Computers); Radio frequency; Transistors; Local oscillator (LO)-to-RF isolation; low-pass filter; mixer; triple cascode;