Title :
The status and future of silicon carbide
Author :
Campisi, George J.
Author_Institution :
Office of Naval Res., Adv. Electr. Power Syst., Arlington, VA, USA
Abstract :
In this paper we discuss the status of a new class of high performance power switching device that is built with semiconductor silicon carbide (SiC). The potential impact on advanced electrical power systems of Sic is discussed and results show SiC switches and diodes with nearly ideal and high speed switching behavior. A hybrid power bridge, a silicon switch with a SiC diode, shows circuit efficiency improving from 88 to 92%
Keywords :
bridge circuits; power semiconductor diodes; power semiconductor switches; semiconductor materials; silicon compounds; 92 percent; SiC; SiC diodes; SiC switches; circuit efficiency; high performance power switching device; high speed switching behavior; hybrid power bridge; nearly ideal behavior; silicon carbide; Bridge circuits; Hybrid power systems; MOSFET circuits; Marine vehicles; Material properties; Power semiconductor switches; Power systems; Semiconductor diodes; Silicon carbide; Thermal conductivity;
Conference_Titel :
Transmission and Distribution Conference and Exposition, 2001 IEEE/PES
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-7285-9
DOI :
10.1109/TDC.2001.971431
