DocumentCode
2011373
Title
The status and future of silicon carbide
Author
Campisi, George J.
Author_Institution
Office of Naval Res., Adv. Electr. Power Syst., Arlington, VA, USA
Volume
2
fYear
2001
fDate
2001
Firstpage
1194
Abstract
In this paper we discuss the status of a new class of high performance power switching device that is built with semiconductor silicon carbide (SiC). The potential impact on advanced electrical power systems of Sic is discussed and results show SiC switches and diodes with nearly ideal and high speed switching behavior. A hybrid power bridge, a silicon switch with a SiC diode, shows circuit efficiency improving from 88 to 92%
Keywords
bridge circuits; power semiconductor diodes; power semiconductor switches; semiconductor materials; silicon compounds; 92 percent; SiC; SiC diodes; SiC switches; circuit efficiency; high performance power switching device; high speed switching behavior; hybrid power bridge; nearly ideal behavior; silicon carbide; Bridge circuits; Hybrid power systems; MOSFET circuits; Marine vehicles; Material properties; Power semiconductor switches; Power systems; Semiconductor diodes; Silicon carbide; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Transmission and Distribution Conference and Exposition, 2001 IEEE/PES
Conference_Location
Atlanta, GA
Print_ISBN
0-7803-7285-9
Type
conf
DOI
10.1109/TDC.2001.971431
Filename
971431
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