DocumentCode
2011380
Title
Thermal management of vertical gallium nitride nanowire arrays: Cooling design and tip temperature measurement
Author
Cheng, Jen-Hau ; Seghete, Dragos ; George, Steven M. ; Yang, Ronggui ; Lee, Y.C.
Author_Institution
Univ. of Colorado at Boulder, Boulder, CO, USA
fYear
2010
fDate
24-28 Jan. 2010
Firstpage
468
Lastpage
471
Abstract
This study reports a new thermal management scheme for vertical Gallium Nitride (GaN) nanowire (NW) arrays. A new cooling design for vertical NWs is developed by encapsulating NWs with electroplated copper. Numerical simulations show that the thermal performance of NW array could be significantly enhanced when encapsulated with high thermal conductivity materials. We have also developed a tip temperature measurement technique to characterize the tip temperature of vertical GaN NWs by using steady-state photoluminescence (PL) system. The cooling design and tip temperature measurement technique can be applied to various NW-based nanoelectronic and nanophotonic applications.
Keywords
III-V semiconductors; electroplated coatings; gallium compounds; nanowires; temperature measurement; thermal analysis; thermal conductivity; thermal management (packaging); GaN; NW-based nanoelectronic; cooling design; electroplated copper; nanophotonic applications; numerical simulation; steady-state photoluminescence system; thermal conductivity materials; thermal management; tip temperature measurement; vertical NW array design; vertical nanowire arrays; Conducting materials; Cooling; Copper; Gallium nitride; III-V semiconductor materials; Numerical simulation; Steady-state; Temperature measurement; Thermal conductivity; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location
Wanchai, Hong Kong
ISSN
1084-6999
Print_ISBN
978-1-4244-5761-8
Electronic_ISBN
1084-6999
Type
conf
DOI
10.1109/MEMSYS.2010.5442465
Filename
5442465
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