High temperature thermoelectric properties of Czochralski-pulled Ba8Ga16Ge30

Author

Christensen, M. ; Snyder, G.Jeffrey ; Iversen, B.B.

Author_Institution

Dept. of Chem., Univ. of Aarhus

fYear

2006

fDate

6-10 Aug. 2006

Firstpage

40

Lastpage

43

Abstract

High temperature thermoelectric properties have been measured on a Czochralski pulled Ba₈Ga₁₆Ge₃₀ crystal. Complete transport properties obtained in the temperature range from 273K to 1150K. The physical properties are reproducible even after thermal cycling. The Seebeck coefficient reveals the sample to be an n-type conductor with a maximum value of -148 muV/K at 1073K. The electrical resistivity shows the characteristics of a heavily doped semi conductor, and it goes through a maximum at 1073 K with a value of 1.7 mOmega-cm. The thermal conductivity goes through a minimum of 1.25 W/m-K around 900K, and ZT reaches a maximum of 0.9 at 1000 K

Keywords

Seebeck effect; barium compounds; crystal growth from melt; electrical resistivity; gallium compounds; germanium compounds; thermal conductivity; 273 to 1150 K; Ba₈Ga₁₆Ge₃₀; Czochralski-pulled crystal; Seebeck coefficient; electrical resistivity; heavily doped semiconductor; high temperature thermoelectric property; n-type conductor; thermal conductivity; thermal cycling; transport property; Atomic measurements; Barium; Conductors; Furnaces; Materials science and technology; Shape measurement; Temperature; Thermal conductivity; Thermoelectricity; Weapons;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2006. ICT '06. 25th International Conference on

Conference_Location

Vienna

ISSN

1094-2734

Print_ISBN

1-4244-0811-3

Electronic_ISBN

1094-2734

Type

conf

DOI

10.1109/ICT.2006.331265

Filename

4133231