Title :
Advances in power MOSFET technologies for automotive applications
Author :
Owyang, King ; Bulucea, Constantin ; Hshieh, Flu-Iuan ; Yilmaz, Hamza
Author_Institution :
Siliconix Inc., Santa Clara, CA, USA
Abstract :
Two advanced 60 V power MOSFET technologies are presented for automotive applications. The first is a submicron channel DMOS technology which yields a specific on-resistance of 1.7 mΩ-cm2, about half the value obtained by present production DMOS devices. The second is a trench DMOS technology developed to yield 1.1 mΩcm2 of specific on-resistance. Devices fabricated from both technologies exhibit superior rugged device performances in unclamped inductive switching (UIS). Design and process considerations are also discussed
Keywords :
automotive electronics; insulated gate field effect transistors; power transistors; 60 V; UIS; automotive applications; power MOSFET; rugged device performances; specific on-resistance; submicron channel DMOS technology; unclamped inductive switching; Automotive applications; Automotive engineering; Epitaxial layers; FETs; Low voltage; MOSFET circuits; Power MOSFET; Process design; Production; Space technology;
Conference_Titel :
Automotive Power Electronics, 1989
Conference_Location :
Dearborn, MI
DOI :
10.1109/APE.1989.97148
