Highly Reliable E/sup 2/prom Cell Fabricated with Etox/sup Tm/ Flash Process

Author

Lai, S. ; Mielke, H. ; Atwood, G. ; Chao, C. ; Johnson, B. ; Kumar, A. ; Tam, S. ; Tang, D.

Author_Institution

Intel Corporation, Santa Clara, California

fYear

1991

fDate

28-30 May 1991

Firstpage

Lastpage

Keywords

Breakdown voltage; Capacitance; Current supplies; Electric breakdown; Fingers; Impact ionization; Leakage current; PROM; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on

Conference_Location

Oiso, Japan

Type

DOI

10.1109/VLSIT.1991.705989

Filename

705989

Link To Document