Title :
Highly Reliable E/sup 2/prom Cell Fabricated with Etox/sup Tm/ Flash Process
Author :
Lai, S. ; Mielke, H. ; Atwood, G. ; Chao, C. ; Johnson, B. ; Kumar, A. ; Tam, S. ; Tang, D.
Author_Institution :
Intel Corporation, Santa Clara, California
Keywords :
Breakdown voltage; Capacitance; Current supplies; Electric breakdown; Fingers; Impact ionization; Leakage current; PROM; Silicon; Tunneling;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705989
