Title :
A CMOS image sensor for monochromatic spectrum imaging
Author :
Chen Yuan ; Xu Zhihai ; Feng Huajun
Author_Institution :
Dept. of Opt. Eng., Zhejiang Univ., Hangzhou
Abstract :
A CMOS image sensor based on standard CMOS process which can image the monochromatic spectrum image was developed. It took the advantage of the penetration depth differences of monochromatic light in silicon. Through the usage of double junctions photodiode which can sense short wavelength and long wavelength illumination simultaneously, we got the final device response which increase monotonically with the wavelength, and the wavelength can be known through this monotonicity. First we introduced the basic principle of the device, then ideas in pixel design and array readout circuitry were given, finally we measured the manufactured device, the QEs of the device and the monotonic relationship between the device and the wavelength of the monochromatic spectrum were given.
Keywords :
CMOS image sensors; elemental semiconductors; photodiodes; readout electronics; silicon; CMOS image sensor; Si; array readout circuitry; double junction photodiode; monochromatic spectrum imaging; monotonic relationship; penetration depth difference; pixel design; standard CMOS process; wavelength illumination; Absorption; CMOS image sensors; CMOS process; Circuits; Diodes; Image sensors; Optical imaging; Photodiodes; Pixel; Silicon; CMOS image sensor; monochromatic spectrum imaging; vertical integrated diode;
Conference_Titel :
Imaging Systems and Techniques, 2009. IST '09. IEEE International Workshop on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-3482-4
Electronic_ISBN :
978-1-4244-3483-1
DOI :
10.1109/IST.2009.5071592