• DocumentCode
    2011734
  • Title

    A CMOS image sensor for monochromatic spectrum imaging

  • Author

    Chen Yuan ; Xu Zhihai ; Feng Huajun

  • Author_Institution
    Dept. of Opt. Eng., Zhejiang Univ., Hangzhou
  • fYear
    2009
  • fDate
    11-12 May 2009
  • Firstpage
    6
  • Lastpage
    10
  • Abstract
    A CMOS image sensor based on standard CMOS process which can image the monochromatic spectrum image was developed. It took the advantage of the penetration depth differences of monochromatic light in silicon. Through the usage of double junctions photodiode which can sense short wavelength and long wavelength illumination simultaneously, we got the final device response which increase monotonically with the wavelength, and the wavelength can be known through this monotonicity. First we introduced the basic principle of the device, then ideas in pixel design and array readout circuitry were given, finally we measured the manufactured device, the QEs of the device and the monotonic relationship between the device and the wavelength of the monochromatic spectrum were given.
  • Keywords
    CMOS image sensors; elemental semiconductors; photodiodes; readout electronics; silicon; CMOS image sensor; Si; array readout circuitry; double junction photodiode; monochromatic spectrum imaging; monotonic relationship; penetration depth difference; pixel design; standard CMOS process; wavelength illumination; Absorption; CMOS image sensors; CMOS process; Circuits; Diodes; Image sensors; Optical imaging; Photodiodes; Pixel; Silicon; CMOS image sensor; monochromatic spectrum imaging; vertical integrated diode;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Imaging Systems and Techniques, 2009. IST '09. IEEE International Workshop on
  • Conference_Location
    Shenzhen
  • Print_ISBN
    978-1-4244-3482-4
  • Electronic_ISBN
    978-1-4244-3483-1
  • Type

    conf

  • DOI
    10.1109/IST.2009.5071592
  • Filename
    5071592