Title :
Impact of Polarization Relaxation on Ferroelectric Memory Performance
Author :
Moazzami, R. ; Abt, N. ; Nissan-Cohen, Y. ; Shepherd, W.H. ; Brassington, M.P. ; Chenming Hu
Author_Institution :
Department of Electrical Engineering and Computer Sciences, University of California
Keywords :
Capacitors; Circuit testing; Dielectric losses; Ferroelectric materials; Lead compounds; Logic; Nonvolatile memory; Optical polarization; Random access memory; Voltage;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705990
