• DocumentCode
    2012001
  • Title

    A new scheme for effective IDDQ testing in deep submicron

  • Author

    Tsiatouhas, Y. ; Moisiadis, Y. ; Haniotakis, Th ; Nikolos, D. ; Arapoyanni, A.

  • Author_Institution
    ISD SA, Chalandri, Greece
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    9
  • Lastpage
    14
  • Abstract
    IDDQ, testing has become a widely accepted defect detection technique in CMOS ICs. However its effectiveness in deep submicron is threatened by the increased transistor sub-threshold leakage current. In this paper a new lDDQ testing scheme is proposed based on the use of a compensation circuit. The compensation circuit is used to eliminate, during testing, normal leakage current from the sensing node of the circuit under test so that already known [in the open literature] IDDQ sensing techniques can be applied in deep submicron
  • Keywords
    CMOS integrated circuits; VLSI; compensation; integrated circuit testing; leakage currents; CMOS; IDDQ testing; circuit under test; compensation circuit; deep submicron; defect detection technique; sensing node; transistor sub-threshold leakage current; Circuit simulation; Circuit testing; Isolation technology; Leak detection; Leakage current; Monitoring; Power supplies; Signal to noise ratio; Threshold current; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Defect Based Testing, 2000. Proceedings. 2000 IEEE International Workshop on
  • Conference_Location
    Montreal, Que.
  • Print_ISBN
    0-7695-0637-2
  • Type

    conf

  • DOI
    10.1109/DBT.2000.843684
  • Filename
    843684
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2012001