Title :
A new scheme for effective IDDQ testing in deep submicron
Author :
Tsiatouhas, Y. ; Moisiadis, Y. ; Haniotakis, Th ; Nikolos, D. ; Arapoyanni, A.
Author_Institution :
ISD SA, Chalandri, Greece
Abstract :
IDDQ, testing has become a widely accepted defect detection technique in CMOS ICs. However its effectiveness in deep submicron is threatened by the increased transistor sub-threshold leakage current. In this paper a new lDDQ testing scheme is proposed based on the use of a compensation circuit. The compensation circuit is used to eliminate, during testing, normal leakage current from the sensing node of the circuit under test so that already known [in the open literature] IDDQ sensing techniques can be applied in deep submicron
Keywords :
CMOS integrated circuits; VLSI; compensation; integrated circuit testing; leakage currents; CMOS; IDDQ testing; circuit under test; compensation circuit; deep submicron; defect detection technique; sensing node; transistor sub-threshold leakage current; Circuit simulation; Circuit testing; Isolation technology; Leak detection; Leakage current; Monitoring; Power supplies; Signal to noise ratio; Threshold current; Threshold voltage;
Conference_Titel :
Defect Based Testing, 2000. Proceedings. 2000 IEEE International Workshop on
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7695-0637-2
DOI :
10.1109/DBT.2000.843684
