DocumentCode
2012147
Title
Selective laser annealing for improved SiGe MEMS structural layers at 210°C
Author
El-Rifai, Joumana ; Witvrouw, Ann ; Aziz, Aznita Abdul ; Puers, Robert ; Van Hoof, Chris ; Sedky, Sherif
Author_Institution
American Univ. in Cairo, Cairo, Egypt
fYear
2010
fDate
24-28 Jan. 2010
Firstpage
324
Lastpage
327
Abstract
This work demonstrates, for the first time, the possibility of optimizing both electrical and mechanical properties of SiGe MEMS structural layers at low temperatures (< 250°C). Using selective laser annealing (LA), it is possible to reduce the strain gradient of SiGe films deposited at 210°C to -1.6×10-7 ¿m-1 and the electrical resistivity can be as low as 2.83 m¿·cm.
Keywords
Ge-Si alloys; electrical resistivity; laser beam annealing; micromechanical devices; SiGe; SiGe MEMS structural layers; electrical properties; electrical resistivity; mechanical properties; selective laser annealing; temperature 210 degC; Annealing; Germanium silicon alloys; Micromechanical devices; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location
Wanchai, Hong Kong
ISSN
1084-6999
Print_ISBN
978-1-4244-5761-8
Electronic_ISBN
1084-6999
Type
conf
DOI
10.1109/MEMSYS.2010.5442501
Filename
5442501
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