Title :
Effect of nickel substitution on thermoelectric properties of SryCo4Sb12
Author :
Li, Xiaoya ; Zhao, Xueying ; Bai, Shengqiang ; Pei, Yanzhong ; Chen, Lidong
Author_Institution :
State Key Lab of High Performance Ceramics & Super Fine Struct., Chinese Acad. of Sci., Shanghai
Abstract :
Bulk samples of SryCo4Sb12 compounds were prepared by melting, quenching, annealing and spark plasma sintering, and characterized by X-ray diffraction and electron probe microanalysis. No impurity phases appear, and the lattice coefficient increases a little due to nickel substitution. The filling fraction of the compounds is smaller than that of the non-substituted ones. The temperature dependences of electrical conductivity, Seebeck coefficient and thermal conductivity were measured from room temperature to 850 K. The results show that nickel doping improves carrier concentration and electrical conductivity, does not change significantly the Seebeck coefficient due to the introduction of ion impurity carrier scattering, and further depresses the thermal conductivity of the strontium filled CoSb3 compounds. A maximum ZT value of 1.07 is achieved at 850 K for Sr0.26Co3.95Ni0.05 Sb12
Keywords :
Seebeck effect; X-ray diffraction; annealing; carrier density; cobalt compounds; doping; electrical conductivity; electron probe analysis; impurities; melting; nickel; quenching (thermal); sintering; strontium compounds; thermal conductivity; 293 to 850 K; Seebeck coefficient; Sr0.26Co3.95Ni0.05Sb12 ; X-ray diffraction; annealing; carrier concentration; electrical conductivity; electron probe microanalysis; filling fraction; impurity phase; ion impurity carrier scattering; lattice coefficient; melting; nickel doping; nickel substitution; quenching; spark plasma sintering; thermal conductivity; thermoelectric properties; Annealing; Impurities; Nickel; Plasma temperature; Sparks; Strontium; Temperature dependence; Temperature measurement; Thermal conductivity; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2006. ICT '06. 25th International Conference on
Conference_Location :
Vienna
Print_ISBN :
1-4244-0811-3
Electronic_ISBN :
1094-2734
DOI :
10.1109/ICT.2006.331300