Future silicon technology

Author

Kim, Kinam

Author_Institution

SAIT, Samsung Electron. Co., Yongin, South Korea

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

1

Lastpage

6

Abstract

Dimensional scaling will continue in Si CMOS technology which will extend to beyond 10nm. Key challenges for dimensional scaling and expansion of silicon-based technologies as well as research directions will be reviewed in traditional semiconductor applications such as DRAM, NAND Flash, logic as well as advanced devices including STT-MRAM, ReRAM and reconfigurable logic. Furthermore, other areas where Si technologies play import roles will be presented including power electronics, solid-state lighting as well as DNA sequencing and medical imaging.

Keywords

CMOS integrated circuits; NAND circuits; flash memories; power electronics; random-access storage; CMOS technology; DNA sequencing; DRAM; NAND flash; ReRAM; STT-MRAM; Si technologies; dimensional scaling; future silicon technology; medical imaging; power electronics; reconfigurable logic; semiconductor applications; silicon-based technologies; solid-state lighting; Gallium nitride; Logic gates; Optical interconnections; Random access memory; Silicon; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European

Conference_Location

Bordeaux

ISSN

1930-8876

Print_ISBN

978-1-4673-1707-8

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2012.6343322

Filename

6343322