DocumentCode :
2012294
Title :
An Ultra-High Emitter Efficiency Transistor with a Low-Temperature Processed Polysilicon Emitter for High-Speed Bipolar Ulsis
Author :
Kondo, M. ; Namba, M. ; Kobayashi, T. ; Iijima, S. ; Nakamura, T.
Author_Institution :
Central Research Laboratory, Tokyo
fYear :
1991
fDate :
28-30 May 1991
Firstpage :
65
Lastpage :
66
Keywords :
Amorphous silicon; Annealing; Bipolar transistors; Boron; Furnaces; Laboratories; Semiconductor films; Testing; Thermal resistance; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
DOI :
10.1109/VLSIT.1991.705992
Filename :
705992
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2012294
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