• DocumentCode
    2012327
  • Title

    Integration and 3D fabrication techniques to nanoscale-tip silicon high-aspect-ratio microprobe arrays

  • Author

    Goryu, A. ; Ikedo, A. ; Kawano, T. ; Ishida, M.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Toyohashi Univ. of Technol., Toyohashi, Japan
  • fYear
    2010
  • fDate
    24-28 Jan. 2010
  • Firstpage
    280
  • Lastpage
    283
  • Abstract
    We developed integration and three-dimensional (3D)-fabrication techniques to nanoscale-tip silicon-microprobe arrays for multiple electrical nano-measurement systems with a high aspect ratio. Vapor-liquid-solid (VLS) grown vertically-aligned 120¿m-length silicon microprobe arrays (2¿m-diameter), each with nanoscale-tip by controlling the silicon-etching (less than 100-nm-diameter, radius of curvature 50nm), have been integrated with IC-processed interconnections. Subsequently, the nanotip silicon probe is entirely covered with Pt/Ti and encapsulated with an insulator, SiO2. In addition, herein we proposed the use of a spray-coating of photoresist and cycled etchings of the photoresist/SiO2 at the probe-tips. Consequently, the nanotips can precisely be patterned and etched, resulting in the exposed Pt/Ti/silicon-nanotip with a controlled height of 2¿m.
  • Keywords
    etching; microelectrodes; micromechanical devices; nanopatterning; photoresists; platinum alloys; probes; silicon compounds; spray coating techniques; titanium alloys; 3D fabrication techniques; IC processed interconnection; Pt-Ti; Si; SiO2; cycled etchings; multiple electrical nanomeasurement system; nanoscale tip high aspect ratio microprobe arrays; photoresist; size 120 mum; size 2 mum; spray coating; vapor liquid solid growth; vertically aligned microprobe array; Etching; Fabrication; Nanobioscience; Nanoscale devices; Nanowires; Plasma applications; Probes; Resists; Scanning electron microscopy; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
  • Conference_Location
    Wanchai, Hong Kong
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-5761-8
  • Electronic_ISBN
    1084-6999
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2010.5442510
  • Filename
    5442510