DocumentCode :
2012327
Title :
Integration and 3D fabrication techniques to nanoscale-tip silicon high-aspect-ratio microprobe arrays
Author :
Goryu, A. ; Ikedo, A. ; Kawano, T. ; Ishida, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Toyohashi Univ. of Technol., Toyohashi, Japan
fYear :
2010
fDate :
24-28 Jan. 2010
Firstpage :
280
Lastpage :
283
Abstract :
We developed integration and three-dimensional (3D)-fabrication techniques to nanoscale-tip silicon-microprobe arrays for multiple electrical nano-measurement systems with a high aspect ratio. Vapor-liquid-solid (VLS) grown vertically-aligned 120¿m-length silicon microprobe arrays (2¿m-diameter), each with nanoscale-tip by controlling the silicon-etching (less than 100-nm-diameter, radius of curvature 50nm), have been integrated with IC-processed interconnections. Subsequently, the nanotip silicon probe is entirely covered with Pt/Ti and encapsulated with an insulator, SiO2. In addition, herein we proposed the use of a spray-coating of photoresist and cycled etchings of the photoresist/SiO2 at the probe-tips. Consequently, the nanotips can precisely be patterned and etched, resulting in the exposed Pt/Ti/silicon-nanotip with a controlled height of 2¿m.
Keywords :
etching; microelectrodes; micromechanical devices; nanopatterning; photoresists; platinum alloys; probes; silicon compounds; spray coating techniques; titanium alloys; 3D fabrication techniques; IC processed interconnection; Pt-Ti; Si; SiO2; cycled etchings; multiple electrical nanomeasurement system; nanoscale tip high aspect ratio microprobe arrays; photoresist; size 120 mum; size 2 mum; spray coating; vapor liquid solid growth; vertically aligned microprobe array; Etching; Fabrication; Nanobioscience; Nanoscale devices; Nanowires; Plasma applications; Probes; Resists; Scanning electron microscopy; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location :
Wanchai, Hong Kong
ISSN :
1084-6999
Print_ISBN :
978-1-4244-5761-8
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2010.5442510
Filename :
5442510
Link To Document :
بازگشت