Title :
Future directions in semiconductor technology for automotive power electronics
Author :
Baliga, B.Jayant
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The authors reports on a panel session which was organized to discuss developments in power semiconductor technology suitable for automotive applications. The panel was chaired by the author, and the panel members were Kailash Jain, King Owyang, Miro Glogolja, Larry Latham, and Bill Dunn. The topics covered were device breakdown voltage specification, the best devices for low and high voltages, discrete vs. monolithic chip partitioning, the possibility of a generic chip, and the possible evolution of application-specific ICs (ASIC). A summary of the general conclusions made by the panel are provided
Keywords :
automotive electronics; semiconductor technology; ASIC; application-specific ICs; automotive power electronics; device breakdown voltage specification; discrete chip partitioning; generic chip; monolithic chip partitioning; semiconductor technology; Automotive applications; Automotive engineering; Breakdown voltage; Conferences; Costs; Low voltage; MOSFET circuits; Power MOSFET; Power engineering computing; Temperature;
Conference_Titel :
Automotive Power Electronics, 1989
Conference_Location :
Dearborn, MI
DOI :
10.1109/APE.1989.97152
