Title :
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs
Author :
Koyama, M. ; Cassé, M. ; Coquand, R. ; Barraud, S. ; Iwai, H. ; Ghibaudo, G. ; Reimbold, G.
Author_Institution :
CEA LETI, MINATEC Campus, Grenoble, France
Abstract :
We report an experimental study of the carrier transport in long channel tri-gate (TG) and omega-gate (ΩG) Si nanowire (NW) transistors with cross-section width down to 10 nm. Electron and hole mobility have been measured down to 20 K. We discuss the influence of channel shape, channel width and strain on carrier mobility. In particular we have shown that transport properties are mainly driven by the relative contribution of the different inversion surfaces, without noticeable differences between TG and ΩGNWs. We have also demonstrated the effectiveness of an additional uniaxial strain in NWs down to 10nm width.
Keywords :
MOSFET; electron mobility; nanowires; silicon-on-insulator; SOI tri-gate Si-nanowire MOSFET; Si; carrier mobility; carrier transport; channel shape; channel width; electron mobility; hole mobility; omega-gate Si-nanowire MOSFET; size 10 nm; strain; MOSFETs; Shape; Silicon; Strain; Stress;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343336
