DocumentCode :
2012500
Title :
Thermoelectric properties of small diameter Bi nanowires: Evidence for surface charges
Author :
Huber, T.E. ; Nikolaeva, A.A. ; Gitsu, D.V. ; Konopko, L.A. ; Graf, M.J.
Author_Institution :
Laser Lab., Howard Univ., Washington, DC
fYear :
2006
fDate :
6-10 Aug. 2006
Firstpage :
224
Lastpage :
227
Abstract :
The thermoelectric properties of quasi-one-dimensional systems attract considerable attention. Semimetallic bismuth, aside from being a good thermoelectric material, has charge carriers with very low effective masses, and, as a result, electronic quantum confinement effects induce a semimetal-to-semiconductor transformation (SMSC) for wires with diameters below roughly 50 nm. Theoretical work based on one-dimensional models indicate that fine Bi wires may exhibit superior thermoelectric properties since the density of states at the Fermi level can be tuned to very high values in this case. However, angle-resolved photoemission spectroscopy (ARPES) studies of Bi surfaces have shown that Bi nanowires support surface states, with high carrier densities of around 5 times 1012 cm-2 and large effective mass, that have not been considered in current models of the SMSC. Our studies of Shubnikov-de Haas oscillations for 30-nm diameter Bi nanowires support this model. According to our estimates, the thermopower of this two dimensional sheet of charge should be observable and we carried out an experimental study of the thermopower of arrays of small diameter Bi nanowires to test these conflicting models of fine Bi nanowires
Keywords :
Fermi level; Shubnikov-de Haas effect; bismuth; carrier density; effective mass; electrical conductivity transitions; electronic density of states; nanowires; photoelectron spectra; surface states; thermoelectric power; 2D charge sheet thermopower; 30 nm; ARPES; Bi; Fermi level density of states; SMSC models; Shubnikov-de Haas oscillations; angle resolved photoemission spectroscopy; array thermopower; bismuth nanowire thermoelectric properties; bismuth nanowires; carrier density; electronic quantum confinement effects; low effective mass charge carriers; quasi-1D system thermoelectric properties; semimetal-semiconductor transformation; semimetallic bismuth; surface charges; surface states; thermoelectric material; Bismuth; Charge carriers; Effective mass; Nanowires; Photoelectricity; Potential well; Rough surfaces; Surface roughness; Thermoelectricity; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2006. ICT '06. 25th International Conference on
Conference_Location :
Vienna
ISSN :
1094-2734
Print_ISBN :
1-4244-0811-3
Electronic_ISBN :
1094-2734
Type :
conf
DOI :
10.1109/ICT.2006.331337
Filename :
4133275
Link To Document :
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