Title :
CMOS compatible ALD high-k double slot grating couplers for on-chip optical interconnects
Author :
Naiini, Maziar M. ; Henkel, Christoph ; Malm, Gunnar B. ; Östling, Mikael
Author_Institution :
Integrated Devices & Circuits, KTH R. Inst. of Technol., Kista, Sweden
Abstract :
Silicon-on-insulator(SOI) novel on-chip grating couplers for double slot high-k waveguides are experimentally demonstrated. The devices were fabricated with standard CMOS process technology. The grating couplers were designed for the best performance at the C-band communication range. Two thin layers of aluminum oxide formed the slot region of the waveguide. The high-k layers were deposited using the atomic layer deposition (ALD) method. A reliable process was realized by etching the structures to the buried oxide. Effect of the top oxide cladding layer on the efficiency was studied. The grating couplers had a measured efficiency of 22% at 1.55μm wavelength. This efficiency is competitive to other results reported by other groups.
Keywords :
CMOS integrated circuits; aluminium compounds; atomic layer deposition; claddings; etching; optical interconnections; silicon-on-insulator; waveguide couplers; ALD method; C-band communication range; CMOS compatible ALD high-k double slot grating couplers; SOI novel on-chip grating couplers; aluminum oxide; atomic layer deposition method; buried oxide; etching; high-k layers; high-k waveguides; measured efficiency; onchip optical interconnects; silicon-on-insulator; slot region; standard CMOS process technology; top oxide cladding layer; Couplers; Couplings; Gratings; High K dielectric materials; Optical waveguides; Silicon;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343341
