Transport in amorphous materials with applications to phase-change memories

Author

Jacoboni, Carlo ; Piccinini, Enrico ; Buscemi, Fabrizio

Author_Institution

Dipt. di Sci. Fis., Informatiche e Matematiche, Univ. di Modena e Reggio Emilia, Modena, Italy

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

97

Lastpage

100

Abstract

Trap-limited conduction is here analyzed with special attention to chalcogenide materials used for phase-change memories. After a short review of existing theories, new developments are presented, based on very general microscopic assumptions. Electric field, carrier concentration, and electron temperature variable along the device, as well as diffusion and Poisson self-consistency are considered. The results account for and interpret all main experimental findings in PCM cells.

Keywords

amorphous semiconductors; carrier density; diffusion; phase change memories; stochastic processes; PCM cell; Poisson self-consistency; amorphous material; carrier concentration; chalcogenide material; diffusion; electric field; electron temperature variable; phase-change memories; trap-limited conduction; Amorphous materials; Electron traps; Impact ionization; Jacobian matrices; Phase change materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European

Conference_Location

Bordeaux

ISSN

1930-8876

Print_ISBN

978-1-4673-1707-8

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2012.6343342

Filename

6343342