Title :
Geometry based resistance model for phase change memory
Author :
Kwong, K.C. ; Mok, Philip K T ; Chan, Mansun
Author_Institution :
Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
A phase change memory resistance model accounting for the geometry of SET and RESET state is developed. The resistance of the memory cell with different dimensions and boundary conditions is solved using conformal mapping including the current crowding effect. When combining with a proper thermal heating model, the read resistance at different degree of crystallization can be predicted, which is important for multi-bit storage simulation. The model has been verified by numerical simulation with different cell geometry and programming current magnitude. The model calculation result is verified by the numerical simulation.
Keywords :
phase change memories; RESET state; cell geometry; conformal mapping; crystallization; current crowding effect; geometry based resistance model; memory cell; multibit storage simulation; phase change memory resistance model; programming current magnitude; thermal heating model; Conformal mapping; Electrodes; Mathematical model; Numerical models; Phase change materials; Resistance;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343343
