DocumentCode :
2012642
Title :
A novel fatigue test with ramping stress amplitude to evaluate fatigue behavior of polysilicon thin films
Author :
Le Huy, Vu ; Gaspar, Joao ; Paul, Oliver ; Kamiya, Shoji
Author_Institution :
Nagoya Inst. of Technol., Nagoya, Japan
fYear :
2010
fDate :
24-28 Jan. 2010
Firstpage :
220
Lastpage :
223
Abstract :
This paper presents a new experimental method to estimate the fatigue behavior of polysilicon thin films by using cyclic loading with gradually increasing stress amplitude. This method solves fundamental problems of conventional fatigue experiments with constant amplitude. The fatigue crack extension process determining fatigue lifetime was estimated by the well-known Paris law with two unknown parameters. These were fit to the results of two methods performed on specimens with two different situations of etching damage. It is shown that the new experimental method can be used to predict the fatigue lifetime in a more efficient manner.
Keywords :
elemental semiconductors; fatigue cracks; fatigue testing; semiconductor thin films; silicon; Paris law; Si; cyclic loading; fatigue behavior; fatigue crack; fatigue lifetime; fatigue test; polysilicon thin films; ramping stress amplitude; Amplitude estimation; Degradation; Etching; Fatigue; Life estimation; Life testing; Lifetime estimation; Micromechanical devices; Tensile stress; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location :
Wanchai, Hong Kong
ISSN :
1084-6999
Print_ISBN :
978-1-4244-5761-8
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2010.5442527
Filename :
5442527
Link To Document :
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