DocumentCode
2012664
Title
Design and performance of a 120 kV, 40 kW plasma ion implantation facility
Author
Nikiforov, S.A. ; Kim, Ji H. ; Shenderey, S.V. ; Rim, Geun Hie ; Kim, Jung-Ho
Author_Institution
Korea Electrotechnol. Res. Inst., Changwon, South Korea
fYear
2003
fDate
5-5 June 2003
Firstpage
193
Abstract
Summary form only given, as follows. Design of a Plasma Immersion Ion Implantation and Deposition Facility is described and its performance at various operational conditions is discussed. The facility has horizontally mounted cylindrical processing chamber. Two sputter magnetrons can be mounted onto rectangular flanges placed along the chamber symmetrically to its axis for deposition.
Keywords
magnetrons; plasma immersion ion implantation; 120 kV; 40 kW; horizontally mounted cylindrical processing chamber; operational conditions; plasma immersion ion implantation and deposition facility; sputter magnetrons; Insulation; Ion implantation; Materials science and technology; Plasma confinement; Plasma density; Plasma immersion ion implantation; Plasma materials processing; Plasma sheaths; Plasma sources; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location
Jeju, South Korea
ISSN
0730-9244
Print_ISBN
0-7803-7911-X
Type
conf
DOI
10.1109/PLASMA.2003.1228664
Filename
1228664
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