Title :
Design and performance of a 120 kV, 40 kW plasma ion implantation facility
Author :
Nikiforov, S.A. ; Kim, Ji H. ; Shenderey, S.V. ; Rim, Geun Hie ; Kim, Jung-Ho
Author_Institution :
Korea Electrotechnol. Res. Inst., Changwon, South Korea
Abstract :
Summary form only given, as follows. Design of a Plasma Immersion Ion Implantation and Deposition Facility is described and its performance at various operational conditions is discussed. The facility has horizontally mounted cylindrical processing chamber. Two sputter magnetrons can be mounted onto rectangular flanges placed along the chamber symmetrically to its axis for deposition.
Keywords :
magnetrons; plasma immersion ion implantation; 120 kV; 40 kW; horizontally mounted cylindrical processing chamber; operational conditions; plasma immersion ion implantation and deposition facility; sputter magnetrons; Insulation; Ion implantation; Materials science and technology; Plasma confinement; Plasma density; Plasma immersion ion implantation; Plasma materials processing; Plasma sheaths; Plasma sources; Switches;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1228664
