DocumentCode :
2012696
Title :
Thermal actuation, a suitable mechanism for high frequency electromechanical resonators
Author :
Rahafrooz, Amir ; Hajjam, Arash ; Tousifar, Babak ; Pourkamali, Siavash
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Denver, Denver, CO, USA
fYear :
2010
fDate :
24-28 Jan. 2010
Firstpage :
200
Lastpage :
203
Abstract :
This work presents high-frequency thermally actuated micromechanical resonators and demonstrates potential suitability of thermal actuation for high frequency applications. Thermally actuated single crystal silicon resonators with frequencies up 61 MHz have been successfully fabricated and characterized. It is shown both theoretically and experimentally that as opposed to the general perception, thermal actuation is a more efficient actuation mechanism for higher frequency rather than lower frequency applications. Thermal actuation can become a viable and competitive approach as the electromechanical device dimensions reach the lower micron and nanometer range.
Keywords :
crystal resonators; electromechanical effects; micromechanical resonators; crystal silicon resonators; electromechanical resonators; micromechanical resonators; thermal actuation; Actuators; Electric resistance; Fabrication; Fluctuations; Micromechanical devices; Resonance; Resonant frequency; Temperature; Thermal engineering; Thermal force;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location :
Wanchai, Hong Kong
ISSN :
1084-6999
Print_ISBN :
978-1-4244-5761-8
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2010.5442530
Filename :
5442530
Link To Document :
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