Title :
Thermoelectric properties on n-type Si80Ge20 with different Dopants
Author :
Xu, Gui-Ying ; Jiang, Huawei ; Zhang, Chunyan ; Wu, Xiaofeng ; Niu, Sitong
Author_Institution :
Lab. of Special Ceramics & Powder Metall., Beijing Univ. of Sci. & Technol.
Abstract :
SixGe1-x is typical thermoelectric materials used for higher temperature as thermoelectric generator. Their property is dependent on their composition. Here different dopants, including P, Ga, B, GaP, In, Sb and InSb, were used to investigate their effect on the thermoelectric properties of n type Si80Ge20 alloys. The results describe that GaP and InSb are good dopant for n type alloys. Especially p type dopants Ga and In are very good multiplex dopant as dopants GaP and InSb for n type Si80Ge20 respectively by Seebeck coefficient of n type Si80Ge20 at same time
Keywords :
Ge-Si alloys; Seebeck effect; antimony; boron; gallium; gallium compounds; indium; indium compounds; phosphorus; semiconductor doping; semiconductor materials; Seebeck coefficient; Si80Ge20:B; Si80Ge20:Ga; Si80Ge20:GaP; Si80Ge20:In; Si80Ge20:InSb; Si80Ge20:P; Si80Ge20:Sb; multiplex dopant; n-type silicon-germanium alloy; p-type dopants; thermoelectric materials; thermoelectric properties; Composite materials; Inorganic materials; Materials science and technology; Powders; Semiconductor materials; Temperature; Thermal conductivity; Thermoelectricity; X-ray diffraction; X-ray scattering; Si80Ge20 alloy; Thermoelectric Materials; multiplex dopants;
Conference_Titel :
Thermoelectrics, 2006. ICT '06. 25th International Conference on
Conference_Location :
Vienna
Print_ISBN :
1-4244-0811-3
Electronic_ISBN :
1094-2734
DOI :
10.1109/ICT.2006.331367
