Static and low frequency noise characterization of densely packed CNT-TFTs

Static and low frequency noise (LFN) characterrizations in densely packed single-walled carbon nanotube thin film transistors (CNT-TFTs) are presented. To this end, the Y function method (YFM) is employed for parameter extraction in order to alleviate the influence of the channel access resistance. The low field mobility (μ₀), threshold voltage (V_th), mobility attenuation factor (θ) and on/off current ratio have been evaluated with respect to gate mask length (L_mask). The 1/f behavior of LFN has been interpreted with the carrier number and correlated mobility fluctuation model (CNF-CMF). A detailed analysis of the defect density surrounding the surface of carbon nanotube and the Coulomb scattering parameter has also been performed.