Title :
Top-down fabricated ZnO nanowire transistors for application in biosensors
Author :
Sultan, S.M. ; Sun, K. ; de Planque, M.R.R. ; Ashburn, P. ; Chong, H.M.H.
Author_Institution :
Electron. &. Comput. Sci., Univ. of Southampton, Southampton, UK
Abstract :
Top-down ZnO nanowire FETs have been fabricated using mature photolithography, ZnO atomic layer deposition (ALD) and plasma etching. This paper investigates the effects of oxygen adsorption by measuring FET characteristics at different gate bias sweep rates and by characterizing hysteresis effects. Unpassivated devices exhibit a low threshold voltage shift of 5.4 V when the gate bias sweep rate is varied from 2500 V/s to 1.2 V/s and a low hysteresis width of less than 1.5 V. These results are considerably better than the state of the art for bottom-up as-fabricated ZnO nanowire FETs and demonstrate the suitability of this top-down technology for biosensor applications.
Keywords :
atomic layer deposition; biomedical electronics; biosensors; field effect transistors; nanowires; photolithography; sputter etching; zinc compounds; ALD; FET characteristics measurement; ZnO; atomic layer deposition; biosensor application; bottom-up as-fabricated nanowire FET; gate bias sweep rate; hysteresis effect; oxygen adsorption; photolithography; plasma etching; threshold voltage; top-down fabricated nanowire transistor; top-down nanowire FET; top-down technology; unpassivated device; voltage 5.4 V; Biosensors; FETs; Hysteresis; Logic gates; Nanoscale devices; Threshold voltage; Zinc oxide;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343352
