Top-down fabricated ZnO nanowire transistors for application in biosensors

Author

Sultan, S.M. ; Sun, K. ; de Planque, M.R.R. ; Ashburn, P. ; Chong, H.M.H.

Author_Institution

Electron. &. Comput. Sci., Univ. of Southampton, Southampton, UK

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

137

Lastpage

140

Abstract

Top-down ZnO nanowire FETs have been fabricated using mature photolithography, ZnO atomic layer deposition (ALD) and plasma etching. This paper investigates the effects of oxygen adsorption by measuring FET characteristics at different gate bias sweep rates and by characterizing hysteresis effects. Unpassivated devices exhibit a low threshold voltage shift of 5.4 V when the gate bias sweep rate is varied from 2500 V/s to 1.2 V/s and a low hysteresis width of less than 1.5 V. These results are considerably better than the state of the art for bottom-up as-fabricated ZnO nanowire FETs and demonstrate the suitability of this top-down technology for biosensor applications.

Keywords

atomic layer deposition; biomedical electronics; biosensors; field effect transistors; nanowires; photolithography; sputter etching; zinc compounds; ALD; FET characteristics measurement; ZnO; atomic layer deposition; biosensor application; bottom-up as-fabricated nanowire FET; gate bias sweep rate; hysteresis effect; oxygen adsorption; photolithography; plasma etching; threshold voltage; top-down fabricated nanowire transistor; top-down nanowire FET; top-down technology; unpassivated device; voltage 5.4 V; Biosensors; FETs; Hysteresis; Logic gates; Nanoscale devices; Threshold voltage; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European

Conference_Location

Bordeaux

ISSN

1930-8876

Print_ISBN

978-1-4673-1707-8

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2012.6343352

Filename

6343352