DocumentCode :
2012793
Title :
Manufacturing aspects of an ultra-thin chip technology
Author :
Angelopoulos, Evangelos A. ; Al-Shahed, Muhammad S. ; Appel, Wolfgang ; Endler, Stefan ; Ferwana, Saleh ; Harendt, Christine ; Hassan, Mahadi-Ul ; Rempp, Horst ; Zimmermann, Martin ; Burghartz, Joachim N.
Author_Institution :
Inst. for Microelectron. Stuttgart (IMS CHIPS), Stuttgart, Germany
fYear :
2012
fDate :
17-21 Sept. 2012
Firstpage :
141
Lastpage :
144
Abstract :
Ultra-thin silicon (Si) chips fabricated using the recently developed Chipfilm™ technology feature three distinct manufacturing issues, which are discussed in this paper. In Chipfilm™ technology a thin Si membrane is firmly attached to a conventional bulk Si wafer by vertical Si micro-anchors which, however, in the end are controllably fractured to make the thin chips detachable. The associated mechanical stability window is widened by adjusting the arrangement of the micro-anchors, so that chip detachment yields exceeding 99% are achieved. Another not yet reported issue relates to the process temperature and temperature uniformity within the membrane areas, which are thermally connected to the bulk substrate only by the anchors and at the chip edges during processing. Using rapid thermal oxidation and the local oxide thickness as a temperature monitor an on-chip oxide thickness variation of ±3% is determined. Finally, the inherent deformation (warpage) of free-standing ultra-thin chips due to internal stresses is analyzed and their surface height variation is reduced to only ±4 μm using stress compensation techniques.
Keywords :
deformation; internal stresses; mechanical stability; three-dimensional integrated circuits; chip detachment; inherent deformation; internal stresses; manufacturing aspects; mechanical stability window; microanchors; on-chip oxide thickness variation; rapid thermal oxidation; stress compensation technique; surface height variation; ultra thin silicon chip technology; Metals; Rapid thermal processing; Silicon; Strain; Stress; Substrates; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
ISSN :
1930-8876
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2012.6343353
Filename :
6343353
Link To Document :
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