Title :
Current-voltage characteristics of vertical diodes for next generation memories
Author :
An, Hokyun ; Lee, Kong-Soo ; Kang, Yoongoo ; Jeong, Seonghoon ; Yoo, Wonseok ; Han, Jae-Jong ; Kim, Bonghyun ; Lim, Hanjin ; Nam, Seokwoo ; Jeong, Gi-Tae ; Kang, Ho-Kyu ; Chung, Chilhee ; Choi, Byoungdeog
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea
Abstract :
In this paper, current-voltage-temperature (I-V-T) characteristics of vertical diodes realized by different selective epitaxial growth techniques have been investigated. Diodes by the batch-type cyclic SEG process at low temperature have shown eligible performances for vertical switches, including ideality factor of 1.08, off-current of 1.0×10-12 A and on/off-ratio of 2.4×108. The optimization of crystallographic defects and series resistance is expected to be the most critical for the performances of vertical diodes for next generation memories.
Keywords :
epitaxial growth; random-access storage; semiconductor device models; semiconductor diodes; batch-type cyclic SEG process; crystallographic defect; current-voltage-temperature characteristic; diode ideality factor; next generation memories; selective epitaxial growth technique; series resistance; vertical diode; vertical switches; Epitaxial growth; Performance evaluation; Resistance; Semiconductor diodes; Silicon; Temperature; Temperature measurement;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-1707-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2012.6343355
