• DocumentCode
    2012940
  • Title

    High efficiency energy harvester of transferred epitaxial PZT films on stainless steel sheets

  • Author

    Kanno, I. ; Morimoto, K. ; Yokokawa, R. ; Wasa, K. ; Kotera, H. ; Yamauchi, N. ; Ogawa, J. ; Matsushima, T. ; Aizawa, K.

  • Author_Institution
    Dept. of Micro Eng., Kyoto Univ., Kyoto, Japan
  • fYear
    2010
  • fDate
    24-28 Jan. 2010
  • Firstpage
    152
  • Lastpage
    155
  • Abstract
    In this study, we fabricated high-efficiency piezoelectric energy harvesters composed of c-axis oriented PZT thin films. The PZT film was epitaxially grown on a Pt/MgO substrate and successively transferred on to a stainless steel sheet so as to prepare the unimorph cantilevers. Although the harvester had a simple cantilever structure without seismic mass, the resonant frequency could be reduced to 126 Hz due to the thin thickness of stainless sheet of 50 ¿m. When we applied the acceleration of 5 m/s2 on the harvester, it could generate large electric power of 5.3 ¿W at the resonant frequency. Transferred epitaxial PZT films on the metal sheets are effective not only to enhance the output power, but also to reduce the resonant frequency to around environmental vibration using the simple cantilevers.
  • Keywords
    cantilevers; energy harvesting; epitaxial layers; magnesium compounds; microfabrication; piezoelectric thin films; platinum; sheet materials; stainless steel; Pt-MgO; cantilever structure; environmental vibration; epitaxial PZT thin films; frequency 126 Hz; high efficiency piezoelectric energy harvesters; piezoelectric transducer; power 5.3 muW; resonant frequency; size 50 mum; stainless steel sheets; unimorph cantilevers; Electrodes; Fabrication; Molecular beam epitaxial growth; Piezoelectric devices; Piezoelectric films; Power generation; Resonant frequency; Steel; Substrates; Vibrations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
  • Conference_Location
    Wanchai, Hong Kong
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-5761-8
  • Electronic_ISBN
    1084-6999
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2010.5442542
  • Filename
    5442542